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Journal of Vacuum Science & Technology B - AIP Publishing LLC
Journal of Vacuum Science & Technology B - AIP Publishing LLC

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and  observation of Fowler-Nordheim tunneling
Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

Gate-controlled ZnO nanowires for field-emission device application
Gate-controlled ZnO nanowires for field-emission device application

PDF) Roller nanoimprint lithography. J Vac Sci Technol B
PDF) Roller nanoimprint lithography. J Vac Sci Technol B

PDF) Synthesis of TiN/N-doped TiO 2 composite films as visible light active  photocatalyst Synthesis of TiN/N-doped TiO 2 composite films as visible  light active photocatalyst
PDF) Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst

Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and  Microanalysis | Cambridge Core
Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and Microanalysis | Cambridge Core

PDF) Monitoring chamber walls coating deposited during plasma processes:  Application to silicon gate etch processes | Laurent Vallier and Martin  Kogelschatz - Academia.edu
PDF) Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes | Laurent Vallier and Martin Kogelschatz - Academia.edu

PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon  deposition | Giovanni Bruno - Academia.edu
PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon deposition | Giovanni Bruno - Academia.edu

Growth and characterization of germanium epitaxial film on silicon (001)  with germane precursor in metal organic chemical vapour deposition (MOCVD)  chamber – topic of research paper in Materials engineering. Download  scholarly article
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber – topic of research paper in Materials engineering. Download scholarly article

Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com
Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com

PDF] Direct detection and imaging of low-energy electrons witk delta-doped  charge-coupled devices | Semantic Scholar
PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar

Nanoscale control of energy and matter in plasma–surface interactions:  Toward energy- and matter-efficient nanotecha)
Nanoscale control of energy and matter in plasma–surface interactions: Toward energy- and matter-efficient nanotecha)

Atomic relocation processes in impurity-free disordered p -GaAs epilayers  studied by deep level transient spectroscopy
Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy

PDF) Monte Carlo calculations of the beam flux distribution from  molecular-beam epitaxy sources
PDF) Monte Carlo calculations of the beam flux distribution from molecular-beam epitaxy sources

The Filler Laboratory at Georgia Tech
The Filler Laboratory at Georgia Tech

PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting  contact lithography | Mark Horn - Academia.edu
PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting contact lithography | Mark Horn - Academia.edu

PDF) Analytical transmission electron microscopy observations on the  stability of TiCN in electrically conductive α-β SiAlON/TiCN composites |  Hilmi Yurdakul - Academia.edu
PDF) Analytical transmission electron microscopy observations on the stability of TiCN in electrically conductive α-β SiAlON/TiCN composites | Hilmi Yurdakul - Academia.edu

PDF) Nanomachining with a focused neon beam: A preliminary investigation  for semiconductor circuit editing and failure analysis
PDF) Nanomachining with a focused neon beam: A preliminary investigation for semiconductor circuit editing and failure analysis

EUV Maskless Lithography J. Vac. Sci. Technol. B 30, (2012); 9/25/20121K.  Johnson - ppt download
EUV Maskless Lithography J. Vac. Sci. Technol. B 30, (2012); 9/25/20121K. Johnson - ppt download

Fabrication of nanodamascene metallic single electron transistors with  atomic layer deposition of tunnel barrier
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

A synchrotron beamline for extreme-ultraviolet photoresist testing
A synchrotron beamline for extreme-ultraviolet photoresist testing

HSQ - Nanolithography
HSQ - Nanolithography